29‐/35 GHz Dual‐band high‐gain phase shifter with hybrid π‐networks. Issue 22 (25th September 2020)

• Record Type: Journal Article
• Authors: Wei, Dong; Ding, Xuan; Yu, Hai; Kuan, Yen‐Cheng; Gu, Qun Jane; Xu, Zhiwei; Ma, Shunli; Ren, Junyan
• Is Part Of: Electronics letters. Volume 56:Issue 22(2020)
• Page Start: 1179
• Page End: 1181
• Publication Date: 2020-09-25
• Subjects: field effect MIMIC -- CMOS integrated circuits -- millimetre wave phase shifters -- circuit tuning; electrical tuning -- phase shift modules -- signal gain -- passive phase -- continuous phase shift range -- dual‐band high‐gain phase shifter -- hybrid π‐networks -- magnetic tuning -- vertically stacking transistor -- embedded phase shifting -- Gm‐stages -- CMOS process -- size 28.0 nm -- size 1.25 mm -- frequency 35.0 GHz -- frequency 29.0 GHz -- power 26.0 mW -- size 0.75 mm; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2020.1894
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : This Letter presents a 29‐/35 GHz dual‐band high‐gain hybrid π‐network‐based phase shifter. The hybrid π‐network realised by combining electrical tuning through capacitors and magnetic tuning through transformers extends the phase shift range. Furthermore, the phase shift modules are inserted between the vertically stacking transistors to realise the embedded phase shifting with the minimum loss. The Gm‐stages offer the additional signal gain to offset attenuation from the passive phase shifter. This prototype, fabricated in a 28 nm CMOS process, demonstrates a 360° continuous phase shift range with a maximum gain of 22 dB at 35 GHz, and 240° continuous phase shift range with a maximum gain of 20 dB at 29 GHz. It consumes 26 mW power and 1.25 mm × 0.75 mm chip area.