Cite
HARVARD Citation
Hasnaoui, I. et al. (2014). In situ integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz. Electronics letters. 50 (15), pp. 1070-1072. [Online].
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Hasnaoui, I. et al. (2014). In situ integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz. Electronics letters. 50 (15), pp. 1070-1072. [Online].