UV electroluminescence from p‐ZnO:P/n‐ZnO homojunction diode. Issue 18 (1st August 2014)

• Record Type: Journal Article
• Authors: Nagar, S.; Chakrabarti, S.
• Is Part Of: Electronics letters. Volume 50:Issue 18(2014)
• Page Start: 1307
• Page End: 1309
• Publication Date: 2014-08-01
• Subjects: zinc compounds -- phosphorus -- ion implantation -- annealing -- electroluminescence -- ultraviolet spectra -- light emitting diodes -- II‐VI semiconductors; UV electroluminescence -- ZnO:P‐ZnO -- electron volt energy 1.8 eV -- electron volt energy 3.18 eV -- temperature 1000 C -- temperature 900 C -- ultraviolet emission -- electroluminescence spectra -- free electron‐to‐acceptor peak -- light emitting diode -- plasma‐immersion ion implantation -- phosphorus implantation -- homojunction diode; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2055
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The reliability of p‐type ZnO thin films obtained by phosphorus implantation, using plasma‐immersion ion implantation, followed by rapid thermal annealing is reported. Also reported is the fabrication of a ZnO‐based homojunction light‐emitting diode. Low‐temperature photoluminescence measurements after six months showed a dominant free electron‐to‐acceptor peak for samples annealed at 900 and 1000°C, confirming the formation of p‐type films. Room‐temperature electroluminescence spectra for the p‐ZnO:P/n‐ZnO homojunction diode revealed ultraviolet (UV) emission at 3.18 eV; however, the dominant peak was observed at 1.8 eV because of a deep‐level defect peak. Achieving dominant UV emission requires further optimisation of the device structure.