1.3‐µm buried‐heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD. Issue 2 (1st January 2020)

• Record Type: Journal Article
• Authors: Ohiso, Y.; Sato, T.; Shindo, T.; Matsuzaki, H.
• Is Part Of: Electronics letters. Volume 56:Issue 2(2020)
• Page Start: 95
• Page End: 97
• Publication Date: 2020-01-01
• Subjects: distributed Bragg reflector lasers -- surface emitting lasers -- gallium arsenide -- MOCVD -- laser modes -- III‐V semiconductors -- aluminium compounds -- quantum well lasers; buried‐heterostructure VCSEL -- long‐wavelength VCSEL -- thermal resistance -- single transverse mode -- single‐mode operation -- metamorphic DBR -- MOCVD -- emission area -- CW operation -- temperature 17.0 degC -- size 15 mum -- wavelength 1.3 mum -- GaAs‐AlGaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.2958
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The authors report buried‐heterostructure long‐wavelength VCSELs with GaAs/AlGaAs metamorphic DBRs, which has a potential for low thermal resistance and operation in the single transverse mode with a large emission area. In spite of their being upside‐up and unmounted, they achieve CW operation at 17°C, and VCSELs with a 15‐µm mesa exhibit single‐mode operation.