Pin photodiode in 0.15 µm CMOS. Issue 17 (1st August 2014)

• Record Type: Journal Article
• Authors: Davidovic, M.; Wimbauer, T.; Zimmermann, H.
• Is Part Of: Electronics letters. Volume 50:Issue 17(2014)
• Page Start: 1229
• Page End: 1231
• Publication Date: 2014-08-01
• Subjects: p‐i‐n photodiodes -- CMOS integrated circuits -- integrated optoelectronics; PIN photodiode -- CMOS -- deep n‐well -- N‐ISO -- circuit supply voltage -- drift velocity -- reverse voltage -- dynamic quantum efficiency -- responsivity -- size 0.15 mum -- bandwidth 700 MHz -- bandwidth 1.2 GHz -- voltage ‐8 V -- wavelength 730 nm -- wavelength 850 nm; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.1840
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.15 µm CMOS process. A deep n‐well (N‐ISO) allows increase of the reverse voltage of the pin photodiode far above the circuit supply voltage enabling a high drift velocity. Therefore, the large thickness of the intrinsic layer and the high reverse voltage lead to a high dynamic quantum efficiency and to a high bandwidth. The maximum responsivity of 0.46 A/W was measured at 730 nm corresponding to a quantum efficiency of 78.3%. For 850 nm, the −3 dB bandwidth of 700 MHz and for 650 nm the −3 dB bandwidth of 1.2 GHz was obtained at −8 V.