High quantum efficiency deep ultraviolet 4H‐SiC photodetectors. Issue 25 (1st December 2013)

• Record Type: Journal Article
• Authors: Sampath, A.V.; Rodak, L.E.; Chen, Y.; Zhou, Q.; Campbell, J.C.; Shen, H.; Wraback, M.
• Is Part Of: Electronics letters. Volume 49:Issue 25(2013)
• Page Start: 1629
• Page End: 1630
• Publication Date: 2013-12-01
• Subjects: photodetectors -- silicon compounds -- ultraviolet detectors -- wide band gap semiconductors; quantum efficiency -- deep ultraviolet 4H‐ SiC photodetectors -- SiC -- wavelength 200 nm to 235 nm -- depletion region -- absorption -- deep ultraviolet photons -- carrier collection -- deep ultraviolet spectrum -- 4H‐SiC p‐nâˆ'‐metal photodetectors; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.2889
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : 4H‐SiC p ‐ n − ‐metal photodetectors are demonstrated having high external quantum efficiency >∼40% in the deep ultraviolet spectrum between 200 and 235 nm. This improvement is attributed to the improved collection of carriers generated by deep ultraviolet photons through absorption in the depletion region of the detector.