Improving breakdown performance for novel LDMOS using n+ floating islands in substrate. Issue 8 (1st April 2016)

• Record Type: Journal Article
• Authors: Chen, Yinhui; Hu, Sheng Dong; Cheng, Kun; Jiang, Yuyu; Zhou, Jianlin; Tang, Fang; Zhou, Xi Chuan; Gan, Ping
• Is Part Of: Electronics letters. Volume 52:Issue 8(2016)
• Page Start: 658
• Page End: 659
• Publication Date: 2016-04-01
• Subjects: electric breakdown -- semiconductor doping -- MIS devices; n+ floating island -- lateral double‐diffusion MOS -- NFI LDMOS -- high‐voltage blocking state -- drain region -- source region -- electric field modulation -- BV -- breakdown voltage -- doping concentration -- figure‐of‐merit -- FOM -- size 40 mum; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.4140
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A novel lateral double‐diffusion MOS (LDMOS) with n + floating islands in the substrate (NFI LDMOS) is proposed. In the NFI LDMOS, a series of n + floating islands are introduced into the substrate. On the condition of a high‐voltage blocking state, n + floating islands induce the high potential from the drain region to the source region, which modulates the drift region's electric field and leads to a higher breakdown voltage (BV). What is more, the specific on‐resistance ( R on, sp ) is reduced by the higher doping concentration of the drift region due to the n + floating islands. Compared with the conventional LDMOS at the same 40 μm drift region, the BV of the NFI LDMOS is enhanced by 74.6% and R on, sp is reduced by 19.7%. So, the proposed NFI LDMOS possesses a higher figure‐of‐merit (FOM).