1.3 μm InGaAlAs asymmetric corrugation‐pitch‐modulated DFB lasers with high mask margin at 28 Gbit/s. Issue 13 (1st June 2014)

• Record Type: Journal Article
• Authors: Nakahara, K.; Wakayama, Y.; Kitatani, T.; Fukamachi, T.; Sakuma, Y.; Tanaka, S.
• Is Part Of: Electronics letters. Volume 50:Issue 13(2014)
• Page Start: 947
• Page End: 948
• Publication Date: 2014-06-01
• Subjects: indium compounds -- gallium compounds -- aluminium compounds -- optical modulation -- diffraction gratings -- optical hole burning -- semiconductor lasers; asymmetric corrugation‐pitch‐modulated DFB lasers -- distributed feedback lasers -- high mask margin -- direct modulation -- ACPM ACPM grating -- linear light‐current characteristics -- high‐frequency response -- longitudinal spatial hole‐burning suppression -- wavelength 1.3 mum -- bit rate 28 Gbit/s -- temperature 55 degC -- InGaAlAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.0797
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Direct modulation of a 1.3 µm InGaAlAs asymmetric corrugation‐pitch‐modulated (ACPM) distributed feedback (DFB) laser operated at 28 Gbit/s was experimentally demonstrated. The laser exhibits linear light–current characteristics and a high‐frequency response with a small roll‐off at low frequency compared with a conventional λ /4‐shifted DFB laser. Moreover, it attains a high mask margin (20%) under 28 Gbit/s operation at 55°C. These superior properties are due to a superior ACPM grating that suppresses longitudinal spatial hole‐burning.