High‐isolation multi‐port millimetre‐wave CMOS dual‐band T/R switch with integrated band‐pass filtering function. Issue 2 (1st January 2017)

• Record Type: Journal Article
• Authors: Um, Youngman; Nguyen, Cam
• Is Part Of: IET microwaves, antennas & propagation. Volume 11:Issue 2(2017)
• Page Start: 253
• Page End: 259
• Publication Date: 2017-01-01
• Subjects: millimetre wave integrated circuits -- band‐pass filters -- semiconductor switches -- CMOS integrated circuits -- switching functions; size 860 mum -- size 1840 mum -- loss 10 dB to 12.7 dB -- loss 8.9 dB to 12.5 dB -- frequency 56.5 GHz to 63 GHz -- frequency 35.5 GHz to 43.7 GHz -- size 0.18 mum -- complementary metal oxide semiconductor -- compression point -- stop‐band rejection ratio -- insertion loss -- switching function -- shunt nMOS transistor -- single‐pole double‐throw switch -- CMOS dual‐band band‐pass filtering transmit/receive switch -- integrated band‐pass filtering function -- high‐isolation multiport millimetre‐wave CMOS dual‐band T/R switch; Microwaves -- Periodicals; Microwave antennas -- Periodicals; Antennas (Electronics) -- Periodicals; Radio wave propagation -- Periodicals; Microwave communication systems -- Periodicals; 621.381305
• DOI: 10.1049/iet-map.2016.0198
• Languages: English
• ISSNs: 1751-8725

Abstract

Abstract : Fully integrated 0.18‐µm CMOS dual‐band band‐pass filtering transmit/receive (T/R) switch operating in two frequency bands of 35.5–43.7 and 56.5–63 GHz is reported. The developed T/R switch consists of three single‐pole double‐throw switches, each designed based on a band‐pass filter with shunt nMOS transistors performing the switching function. The measured insertion losses of the switch are 8.9/12.5 and 10/12.7 dB for receiving and transmitting operations at 40/60 GHz, respectively. The measured stop‐band rejection ratio between 40 and 51 GHz is over 30/22 dB for two operations, respectively. The measured isolation is 56/51 and 57/51 dB for two operations at 40/60 GHz, respectively. The measured input 1‐dB compression points of the switch are 23, 16.5 for single‐tone 40‐, 60‐GHz input signal and 18/14 dBm at 40/60 GHz for concurrent dual‐tone 40/60‐GHz input signals for transmitting operation, respectively. The total chip size is 1840 µm × 860 µm excluding all the testing pads.