About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65‐nm CMOS. Issue 12 (12th July 2019)

• Record Type: Journal Article
• Authors: Fahs, Bassem; Wu, Kefei; Aouimeur, Walid; Mansha, Muhammad Waleed; Gaquière, Christophe; Gamand, Patrice; Knap, Wojciech; Hella, Mona M.
• Is Part Of: IET microwaves, antennas & propagation. Volume 13:Issue 12(2019)
• Page Start: 2073
• Page End: 2080
• Publication Date: 2019-07-12
• Subjects: millimetre wave oscillators -- field effect MIMIC -- CMOS digital integrated circuits -- phase noise -- integrated circuit layout -- RLC circuits -- skin effect; differential gate equalisation -- high output power -- ultra‐compact layout form factor -- frequency enhancement -- equivalent RLC model -- terahertz oscillator -- skin effect losses -- single‐stage push–push oscillators -- oscillation frequency -- power consumption -- digital CMOS -- phase noise -- standard digital complementary metal–oxide–semiconductor technology -- design concept -- power 80.0 mW -- voltage 1.5 V -- frequency 200.0 GHz to 300.0 GHz -- power 76.0 mW -- size 65 nm; Microwaves -- Periodicals; Microwave antennas -- Periodicals; Antennas (Electronics) -- Periodicals; Radio wave propagation -- Periodicals; Microwave communication systems -- Periodicals; 621.381305
• DOI: 10.1049/iet-map.2018.5308
• Languages: English
• ISSNs: 1751-8725

Abstract

Abstract : This study presents a push–push oscillator architecture based on differential gate equalisation to enhance the oscillation frequency while providing relatively high output power with ultra‐compact layout form factor. The frequency enhancement is derived as a function of the equivalent RLC model of the oscillator's main constituents. The proposed principle is applied to a terahertz oscillator in the 200–300 GHz range to mitigate the excessive substrate and skin effect losses in standard digital 65‐nm complementary metal–oxide–semiconductor technology at such high frequencies. The design concept is validated using two single‐stage push–push oscillators. The first oscillator shows −8.1 dBm output power at 250 GHz oscillation frequency and −106.8 dBc/Hz phase noise at 10 MHz offset while consuming 76 mW power from 1.5 V DC supply voltage. The chip area is 200 × 250 μm 2 . The second oscillator provides −14.8 dBm output power at 285 GHz and −106 dBc/Hz phase noise at 10 MHz offset with 80 mW power consumption from 1.5 V DC supply. The chip area is 200 × 200 μm 2 .