Design and measurement of class EF2 power oscillator. Issue 10 (1st May 2015)

• Record Type: Journal Article
• Authors: Madureira, H.; Deltimple, N.; Kerherve, E.; Dematos, M.; Haddad, S.
• Is Part Of: Electronics letters. Volume 51:Issue 10(2015)
• Page Start: 744
• Page End: 745
• Publication Date: 2015-05-01
• Subjects: CMOS analogue integrated circuits -- power integrated circuits -- UHF oscillators -- UHF integrated circuits -- UHF power amplifiers -- feedback amplifiers -- passive networks -- varactors -- MOS capacitors -- electric breakdown -- power MOSFET -- phase noise -- integrated circuit noise; class EF2 power oscillator -- power amplifier -- feedback path -- passive element -- MOS varactor -- voltage stress reduction -- transistor -- breakdown voltage -- RF frequency -- standard CMOS technology -- class EF2 power circuit -- size 130 nm -- frequency 2.5 GHz -- voltage 2.5 V -- frequency 150 MHz; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.4295
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A class EF2 power oscillator designed in standard 130 nm CMOS at 2.5 GHz frequency is presented. The oscillator relies on a direct path based on a power amplifier and a feedback path based on passive elements and an MOS varactor. Class EF2 is used to reduce voltage stress across the switch, enabling a higher output power for modern transistors with low breakdown voltage. The measurement on a class EF2 power oscillator at radio frequency (RF) is presented for the first time. The circuit achieves 17.65 dBm output power from a 2.5 V supply voltage with 27.1% DC‐RF efficiency and presents a 150 MHz tuning range. The measured phase noise is −101.6 dBc/Hz at 1 MHz offset. The circuit was implemented in standard 130 nm CMOS technology and consumed a total area of 1.95 mm 2 . To the authors' knowledge this class EF2 power circuit has never been presented either at RF frequencies or in an integrated technology.