Cite
HARVARD Citation
Oh, G. et al. (2018). 0.00035 mm2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process. Electronics letters. 54 (4), pp. 213-215. [Online].
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Oh, G. et al. (2018). 0.00035 mm2 on‐chip leakage sensing unit for various devices in 10 nm FinFET process. Electronics letters. 54 (4), pp. 213-215. [Online].