DBR‐free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm. Issue 23 (1st November 2017)

• Record Type: Journal Article
• Authors: Mirkhanov, S.; Quarterman, A.H.; Kahle, H.; Bek, R.; Pecoroni, R.; Smyth, C.J.C.; Vollmer, S.; Swift, S.; Michler, P.; Jetter, M.; Wilcox, K.G.
• Is Part Of: Electronics letters. Volume 53:Issue 23(2017)
• Page Start: 1537
• Page End: 1539
• Publication Date: 2017-11-01
• Subjects: quantum well lasers -- birefringence -- optical filters -- laser cavity resonators -- van der Waals forces -- silicon compounds -- wide band gap semiconductors -- indium compounds -- gallium arsenide -- III‐V semiconductors -- arsenic compounds; SiC -- In0.13Ga0.87As‐GaAs0.94P0.06 -- size 1.574 mum -- wavelength 1007 nm -- power 10.1 W -- silicon carbide intra‐cavity heat spreader -- van der Waals -- strain‐compensating barrier layers -- quantum wells -- resonant periodic gain structure -- linear concentric resonator -- gain chip -- laser cavity -- birefringent filter plate -- distributed Bragg reflector‐free semiconductor disc laser -- DBR‐free semiconductor disc laser; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.2689
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : We report a distributed Bragg reflector‐free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574‐μm‐thick resonant periodic gain structure, with ten In0.13 Ga0.87 As quantum wells embedded in strain‐compensating GaAs0.94 P0.06 barrier layers, van der Waals bonded to a silicon carbide intra‐cavity heat spreader.