300 GHz InP HBT amplifier with 10 mW output power. Issue 5 (1st February 2014)

• Record Type: Journal Article
• Authors: Yu, H.G.; Choi, S.H.; Jeon, S.; Kim, M.
• Is Part Of: Electronics letters. Volume 50:Issue 5(2014)
• Page Start: 377
• Page End: 379
• Publication Date: 2014-02-01
• Subjects: heterojunction bipolar transistors -- terahertz wave devices -- differential amplifiers -- indium compounds -- submillimetre wave amplifiers -- III‐V semiconductors; HBT amplifier -- high‐power terahertz solid‐state amplifier -- HBT technology -- defective‐ground four‐way balun -- differential amplifier chains -- frequency 300 GHz -- power 10 mW -- size 0.25 mum -- size 40 mum -- frequency 305 GHz -- InP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3288
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A high‐power terahertz solid‐state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective‐ground four‐way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small‐signal gain.