AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation. Issue 3 (1st January 2014)

• Record Type: Journal Article
• Authors: Yafune, N.; Hashimoto, S.; Akita, K.; Yamamoto, Y.; Tokuda, H.; Kuzuhara, M.
• Is Part Of: Electronics letters. Volume 50:Issue 3(2014)
• Page Start: 211
• Page End: 212
• Publication Date: 2014-01-01
• Subjects: aluminium compounds -- contact resistance -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- ohmic contacts -- wide band gap semiconductors; stable high‐temperature operation -- HEMTs -- metal stack -- low contact resistivity -- drain ohmic contacts -- source ohmic contacts -- drain current degradation -- voltage ‐3.4 V -- temperature 300 K to 573 K -- AlN -- AlN‐AlGaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.2846
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An AlN/AlGaN high‐electron‐mobility transistor (HEMT) fabricated on a free‐standing AlN substrate is demonstrated. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of −3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, demonstrating that an AlN/AlGaN approach on an AlN substrate is promising for stable high‐temperature operation.