Adaptive delay control for synchronous rectification phase‐shifted full bridge converter with GaN HEMT. Issue 23 (1st November 2017)

• Record Type: Journal Article
• Authors: Joo, D.M.; Byun, J.E.; Lee, B.K.; Kim, J.S.
• Is Part Of: Electronics letters. Volume 53:Issue 23(2017)
• Page Start: 1541
• Page End: 1542
• Publication Date: 2017-11-01
• Subjects: adaptive control -- delay systems -- rectifying circuits -- HEMT circuits -- gallium compounds -- wide band gap semiconductors -- III‐V semiconductors -- bridge circuits -- phase shifters -- power convertors; adaptive delay control method -- synchronous rectification phase‐shifted full bridge converter -- HEMT -- synchronous rectifier -- secondary switches -- dead time reduction -- gallium nitride high‐electron‐mobility transistors -- power 500 W -- GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.3261
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An adaptive delay control method for a phase‐shifted full bridge converter with a synchronous rectifier is presented. With this control, the delay time between primary and secondary switches can be optimised to reduce dead time, according to output power. Moreover, due to the poor third quadrant conduction of gallium nitride (GaN) high‐electron‐mobility transistors (HEMTs), the dead time needs to be optimised to utilise the benefits of a GaN HEMT. The experimental results with a 500 W prototype show that the efficiency can be improved by 0.7% with the proposed control.