Cite
HARVARD Citation
Wang, K. et al. (2018). 69–78 GHz ESD‐protected SiGe BiCMOS PA with 30 dB automatic level control for mm‐wave 5G applications. Electronics letters. 54 (22), pp. 1286-1288. [Online].
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Wang, K. et al. (2018). 69–78 GHz ESD‐protected SiGe BiCMOS PA with 30 dB automatic level control for mm‐wave 5G applications. Electronics letters. 54 (22), pp. 1286-1288. [Online].