Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm. Issue 10 (1st May 2016)

• Record Type: Journal Article
• Authors: Hosoda, T.; Fradet, M.; Frez, C.; Shterengas, L.; Sander, S.; Forouhar, S.; Belenky, G.
• Is Part Of: Electronics letters. Volume 52:Issue 10(2016)
• Page Start: 857
• Page End: 859
• Publication Date: 2016-05-01
• Subjects: distributed feedback lasers -- semiconductor lasers -- semiconductor quantum wells -- electron beam lithography -- ridge waveguides -- antireflection coatings -- Bragg gratings -- wide band gap semiconductors -- III‐V semiconductors -- optical waveguides; laterally coupled lasers -- distributed feedback lasers -- cascade diode lasers -- cascade type‐I quantum well -- second order index grating -- e‐beam lithography -- shallow ridge waveguide -- antineutral reflection coating -- solder‐mounted epitaxial -- frequency operation -- Bragg wavelength temperature -- size 4 mum -- size 2 mm -- power 13 mW -- temperature 20 degC -- wavelength 2.9 mum -- size 825 nm -- GaSb; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.0115
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Cascade type‐I quantum well GaSb‐based laterally coupled distributed feedback diode lasers emitting near 2.9 µm were designed and fabricated. Second order index grating with period of 825 nm was defined by e‐beam lithography and etched on both sides of 4‐µm‐wide shallow ridge waveguide. Anti‐/neutral reflection coated 2‐mm‐long devices that were solder‐mounted epitaxial side‐up demonstrated stable single frequency operation in a wide temperature range with output power of 13 mW at 20°C. Bragg wavelength temperature tuning rate was ∼0.32 nm/K.