Effects of periodic trench structure on cathodo‐luminescence in InGaN/GaN multi‐quantum wells. Issue 14 (1st July 2014)

• Record Type: Journal Article
• Authors: Kim, G.; Kim, S.W.; Kim, J.H.; Park, E.; Park, B.‐G.
• Is Part Of: Electronics letters. Volume 50:Issue 14(2014)
• Page Start: 1012
• Page End: 1014
• Publication Date: 2014-07-01
• Subjects: cathodoluminescence -- indium compounds -- gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- semiconductor quantum wells -- quantum confined Stark effect -- electron beam lithography -- sputter etching -- spectral line shift -- semiconductor growth; periodic trench structure effects -- multiquantum wells -- quantum‐confined stark effect -- electron‐beam lithography -- e‐beam lithography -- inductively‐coupled plasma dry etching process -- ICP dry etching process -- cathodoluminescence spectra -- InGaN‐GaN -- QCSE -- light emitting area -- blue‐shift -- trench patterns; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.1567
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : To reduce strain and the quantum‐confined Stark effect (QCSE), periodic trenches in an InGaN/GaN multi‐quantum well (MQW) are patterned by electron‐beam (e‐beam) lithography and the inductively‐coupled plasma (ICP) dry etching process. The effects of the fabricated structure are investigated by measuring cathodo‐luminescence (CL) spectra and comparing it with the data of an as‐grown sample without trench patterns. The peak wavelength of the prepared samples is clearly blue‐shifted, and it is confirmed that the strain and the QCSE are reduced by the effects of the trench structures. It is also confirm that the peak intensity of CL spectra shows a maximum when 90% of the active region is remaining, because the trench patterns reduce the light emitting area as well as the strain and the QCSE.