Nonlinear modelling of dynamic self‐heating in 28 nm bulk complementary metal–oxide semiconductor technology. Issue 7 (1st April 2015)

• Record Type: Journal Article
• Authors: Sahoo, A.K.; Fregonese, S.; Scheer, P.; Celi, D.; Juge, A.; Zimmer, T.
• Is Part Of: Electronics letters. Volume 51:Issue 7(2015)
• Page Start: 581
• Page End: 583
• Publication Date: 2015-04-01
• Subjects: CMOS integrated circuits -- field effect transistors -- semiconductor device models -- integrated circuit modelling -- field effect MMIC; nonlinear modelling -- dynamic self‐heating -- bulk complementary metal–oxide semiconductor technology -- field effect transistors -- low‐frequency S‐parameter measurements -- CMOS -- thermal impedance -- bias points -- size 28 nm -- temperature 293 K to 298 K -- frequency 10 kHz to 3 GHz; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0200
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A new and simple approach for nonlinear modelling of the dynamic self‐heating effect in bulk complementary metal–oxide semiconductor (CMOS) field effect transistors is presented. Low‐frequency S ‐parameter measurements are performed in 28 nm bulk CMOS technology at room temperature between a 10 kHz and 3 GHz frequency range and the thermal impedance ( Z TH ) of the devices is extracted. The proposed model is validated through the measurements for different bias points. The results obtained demonstrate a reasonable agreement between theoretical prediction and experimental data.