Complementary metal‐oxide semiconductor Doherty power amplifier based on voltage combining method. Issue 3 (1st February 2014)

• Record Type: Journal Article
• Authors: Zhao, Chenxi; Park, Byungjoon; Kim, Bumman
• Is Part Of: IET microwaves, antennas & propagation. Volume 8:Issue 3(2014)
• Page Start: 131
• Page End: 136
• Publication Date: 2014-02-01
• Subjects: CMOS integrated circuits -- power amplifiers -- transformers; metal‐oxide semiconductor Doherty power amplifier -- voltage combining method -- complementary metal‐oxide semiconductor -- CMOS process -- voltage combining transformer -- load modulation -- current combining Doherty amplifiers -- power‐added efficiency -- maximum output power -- power back‐off point -- CMOS Doherty PA design -- frequency 1.75 GHz -- voltage 3.4 V; Microwaves -- Periodicals; Microwave antennas -- Periodicals; Antennas (Electronics) -- Periodicals; Radio wave propagation -- Periodicals; Microwave communication systems -- Periodicals; 621.381305
• DOI: 10.1049/iet-map.2013.0241
• Languages: English
• ISSNs: 1751-8725

Abstract

Abstract : A 1.75 GHz Doherty power amplifier (PA) is designed and implemented in a 0.18‐µm complementary metal‐oxide semiconductor (CMOS) process. This Doherty PA uses a voltage combining transformer to combine the output power and realise the load modulation which is different from conventional current combining Doherty amplifiers. The prototype has a power‐added efficiency (PAE) of 31.6% at a maximum output power of 28.6 dBm from 3.4 V supply voltage. The PAE at 6 dB back‐off is still high, about 25%. It shows clearly the efficiency enhancement at the power back‐off point because of the Doherty operation. This is the first use of voltage combining techniques in CMOS Doherty PA design.