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HARVARD Citation
An, J. et al. (2018). Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory. Electronics letters. 54 (6), pp. 350-351. [Online].
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An, J. et al. (2018). Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory. Electronics letters. 54 (6), pp. 350-351. [Online].