Broadband on‐chip contact pad to microstrip transition with low loss in SiGe BiCMOS technology. Issue 23 (1st November 2018)

• Record Type: Journal Article
• Authors: von Vangerow, C.; Göttel, B.; Müller, D.; Zwick, T.
• Is Part Of: Electronics letters. Volume 54:Issue 23(2018)
• Page Start: 1338
• Page End: 1340
• Publication Date: 2018-11-01
• Subjects: BiCMOS integrated circuits -- Ge‐Si alloys -- microstrip transitions -- coplanar waveguides -- bipolar MIMIC -- field effect MIMIC -- semiconductor materials -- integrated circuit testing; electrical field -- ground pads -- substrate shield -- lossy silicon substrate -- electromagnetic field simulations -- high‐frequency measurement probe -- field distribution -- realistic excitation source -- fabricated test structure -- insertion loss -- silicon based technologies -- coplanar waveguide structure -- broadband properties -- BiCMOS technology -- broadband compact on‐chip contact pad -- back‐to‐back configuration -- millimetre‐wave applications -- microstrip transition -- SiGe -- Si; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2018.5667
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A broadband, compact on‐chip contact pad to microstrip transition for use in silicon (Si) based technologies operating up to 330 GHz has been investigated and fabricated. The pad is designed as a short coplanar waveguide structure to concentrate the electrical field in the narrow gap between signal and ground pads, thus eliminating the need for a substrate shield while preserving low interaction with the lossy silicon substrate. The working principle is confirmed by electromagnetic field simulations using a detailed model of a high‐frequency measurement probe, which allows to investigate the field distribution with a realistic excitation source. The fabricated test structure with two transitions in a back‐to‐back configuration shows excellent broadband properties and insertion loss below 4.2 dB up to 330 GHz, making the proposed structure well suited for millimetre‐wave applications.