Temperature dependent polarity inversion in double‐metal terahertz emitters. Issue 16 (1st August 2018)

• Record Type: Journal Article
• Authors: Gow, P.C.; McBryde, D.; Berry, S.A.; Apostolopoulos, V.
• Is Part Of: Electronics letters. Volume 54:Issue 16(2018)
• Page Start: 991
• Page End: 993
• Publication Date: 2018-08-01
• Subjects: cryostats; single edge metal emitters -- helium flow cryostat -- THz emission -- metallic contact -- temperature dependent polarity inversion -- double‐metal terahertz emitters -- DM emitters -- metal pairings -- insulating layers; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2018.0961
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The temperature dependent polarity inversion in double‐metal (DM) terahertz (THz) emitters was investigated. DM emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.