Power divider with bandwidth from 14 to 82 GHz in CMOS IC technology. Issue 14 (1st July 2014)

• Record Type: Journal Article
• Authors: Dang, Trung‐Sinh; Lee, Bomson; Yoon, Sang‐Woong
• Is Part Of: Electronics letters. Volume 50:Issue 14(2014)
• Page Start: 1007
• Page End: 1009
• Publication Date: 2014-07-01
• Subjects: CMOS integrated circuits -- microwave integrated circuits -- millimetre wave integrated circuits -- power dividers -- coupled circuits; CMOS IC technology -- on‐chip power divider -- TSMC RF CMOS process -- coupled line -- bandwidth 14 GHz to 82 GHz -- size 180 nm -- loss 2.8 dB to 10.5 dB; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.0528
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An on‐chip power divider with an extremely wide bandwidth is presented. The power divider was implemented in a TSMC 180 nm RF CMOS process. Measurements showed an absolute bandwidth of 68 GHz from 14 to 82 GHz with a matching condition of <−10 dB, which was the fractional bandwidth of 141.7%. A very accurate bandwidth analysis using the theory of three coupled lines is provided. An insertion loss of 2.8–10.5 dB was measured across the bandwidth. The core size of the power divider is 0.2 × 0.73 mm.