0.7–2.7 GHz wideband CMOS low‐noise amplifier for LTE application. Issue 23 (1st November 2013)

• Record Type: Journal Article
• Authors: Hidayov, O.A.; Nam, N.H.; Yoon, G.; Han, S.K.; Lee, S.G.
• Is Part Of: Electronics letters. Volume 49:Issue 23(2013)
• Page Start: 1433
• Page End: 1435
• Publication Date: 2013-11-01
• Subjects: CMOS analogue integrated circuits -- low noise amplifiers -- wideband amplifiers -- Long Term Evolution; voltage 1.8 V -- current 7.5 mA -- gain 17 dB -- size 0.18 micron -- frequency 0.7 GHz to 2.7 GHz -- NF reduction -- operational bandwidth -- interstage parasitics -- intercascade inductor -- noise figure -- wideband input matching -- current‐bleeding common‐source topology -- capacitive cross‐coupled common‐gate -- long‐term evolution -- wideband LNA -- LTE application -- wideband CMOS low noise amplifier; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3103
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A wideband low‐noise amplifier (LNA) for long‐term evolution applications is presented. A capacitive cross‐coupled common‐gate in combination with current‐bleeding common‐source topologies is adopted for wideband input matching, high gain and low noise figure (NF). Inter‐cascade inductors are adopted to cancel the inter‐stage parasitics, which extend input matching and operational bandwidth to higher frequency with additional NF reduction. Implemented in a 0.18 µm CMOS technology, the proposed wideband LNA shows a voltage gain of 17 dB, a NF of < 2.5 dB, | S 11 | of higher than 10 dB and a maximum IIP3 of + 1.52 dBm over the frequency range of 0.7–2.7 GHz while consuming 7.5 mA from a 1.8 V supply.