1.9 µm hybrid silicon/III‐V semiconductor laser. Issue 10 (1st May 2013)

• Record Type: Journal Article
• Authors: Dong, P.; Hu, T.‐C.; Zhang, L.; Dinu, M.; Kopf, R.; Tate, A.; Buhl, L.; Neilson, D.T.; Luo, X.; Liow, T.‐Y.; Lo, G.‐Q.; Chen, Y.‐K.
• Is Part Of: Electronics letters. Volume 49:Issue 10(2013)
• Page Start: 664
• Page End: 666
• Publication Date: 2013-05-01
• Subjects: compensation -- elemental semiconductors -- gallium arsenide -- III‐V semiconductors -- indium compounds -- laser transitions -- quantum well lasers -- silicon -- silicon‐on‐insulator -- wafer bonding -- waveguide lasers; InP -- Si -- InGaAs‐Si -- temperature 5 degC -- temperature 293 K to 298 K -- current 45 mA -- current 95 mA -- wavelength 1.9 mum -- threshold current -- transition tapers -- processed silicon waveguides -- silicon‐on‐insulator wafer -- strain compensation -- multiple quantum wells -- wafer bonding technique -- hybrid silicon‐III‐V semiconductor laser; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.0674
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A 1.9 µm hybrid silicon/III‐V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III‐V wafer is bonded to a silicon‐on‐insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.