212‐Gbit/s 2:1 multiplexing selector realised in InP DHBT. Issue 5 (1st March 2019)

• Record Type: Journal Article
• Authors: Konczykowska, A.; Jorge, F.; Riet, M.; Nodjiadjim, V.; Duval, B.; Mardoyan, H.; Estaran, J.M.; Adamiecki, A.; Raybon, G.; Dupuy, J.‐Y.
• Is Part Of: Electronics letters. Volume 55:Issue 5(2019)
• Page Start: 242
• Page End: 244
• Publication Date: 2019-03-01
• Subjects: bipolar integrated circuits -- multiplexing equipment -- indium compounds -- heterojunction bipolar transistors -- III‐V semiconductors; InP DHBT -- fully integrated multiplexing selector -- multiplexing selector -- indium phosphide double‐heterojunction bipolar transistor technology -- optical transmission -- modulator driver -- power 0.5 W -- power 0.8 W -- voltage 240.0 mV -- voltage 730.0 mV -- InP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2018.7545
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7‐µm indium phosphide (InP) double‐heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200‐Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s.