Wideband analytical extraction technique of π‐equivalent circuit model for Si/SiGe heterojunction bipolar transistor in BICMOS process. Issue 1 (1st January 2014)

• Record Type: Journal Article
• Authors: Taher, Hany
• Is Part Of: IET microwaves, antennas & propagation. Volume 8:Issue 1(2014)
• Page Start: 57
• Page End: 63
• Publication Date: 2014-01-01
• Subjects: BiCMOS integrated circuits -- broadband networks -- heterojunction bipolar transistors -- S‐parameters -- silicon compounds; frequency 40 GHz to 60 GHz -- bias conditions -- S‐parameters measurements -- base resistance -- intrinsic model parameters -- BICMOS process -- heterojunction bipolar transistor -- πequivalent circuit model -- wideband analytical extraction technique; Microwaves -- Periodicals; Microwave antennas -- Periodicals; Antennas (Electronics) -- Periodicals; Radio wave propagation -- Periodicals; Microwave communication systems -- Periodicals; 621.381305
• DOI: 10.1049/iet-map.2013.0321
• Languages: English
• ISSNs: 1751-8725

Abstract

Abstract : A developed analytical extraction technique of small‐signal π‐topology equivalent circuit model for Si/SiGe heterojunction bipolar transistor is presented. The intrinsic model parameters, including base resistance ( R b ) which are difficult to extract in the previous works, are analytically extracted by utilising a novel set of exact equations that do not need any numerical fitting, special polarisation of the device or any kind of post processing. Moreover, the substrate effect and the distributed base‐collector junction are accurately modelled and extracted. To the authors knowledge, the extracted values using the presented methodology exhibit flattest and widest frequency independent behaviour among all those extracted with earlier published analytical techniques, especially for base resistance. Excellent agreement is noted between the S ‐parameters measurements and their simulated counterpart using the extracted model in the frequency range from 40 MHz–40 GHz at different bias conditions.