Fabrication of 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite‐channel high electron‐mobility transistors on GaAs substrates. Issue 4 (1st February 2016)

• Record Type: Journal Article
• Authors: Kang, Weihua; Zhang, Xiaodong; Ji, Xian; Cai, Yong; Zhou, Jiahui; Xu, Wenjun; Li, Qi; Xiao, Gongli; Zhang, Baoshun; Li, Haiou
• Is Part Of: Electronics letters. Volume 52:Issue 4(2016)
• Page Start: 318
• Page End: 319
• Publication Date: 2016-02-01
• Subjects: millimetre wave transistors -- high electron mobility transistors -- composite materials -- semiconductor device manufacture -- photolithography -- electron beam lithography -- current density -- molecular beam epitaxial growth -- nanoelectronics -- indium compounds -- III‐V semiconductors; In0.7Ga0.3As‐In0.6Ga0.4As -- frequency 258.62 GHz -- frequency 187.94 GHz -- size 45 nm -- oscillation frequency -- unity current gain cut‐off frequency -- current density -- nanometer mHEMT device -- e‐beam lithography technology -- optical lithography technology -- sheet density -- electron mobility -- molecular beam epitaxy -- high electron‐mobility transistors -- metamorphic composite‐channel; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2126
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A 45 nm high In component metamorphic In0.7 Ga0.3 As/In0.6 Ga0.4 As composite‐channel high electron‐mobility transistor (mHEMT) on GaAs substrate with good DC and RF performance has been developed. The structure was grown by molecular beam epitaxy and exhibits a superior electron mobility of 10200 cm 2 /(V.s) and a sheet density of 3.5 × 1012 cm −2 at a room temperature. A combined optical and e‐beam lithography technology was used to achieve the nanometre mHEMT device. The mHEMT device shows an extrinsic transconductance of up to 990 mS/mm and a maximum current density of 910 mA/mm. The unity current gain cutoff frequency fT and the maximum oscillation frequency f max are 187.94 and 258.62 GHz, respectively. These performances make the device well suited for millimetre‐wave applications.