Cite
HARVARD Citation
Zhu, J. et al. (2016). 500 V SOI lateral pin diode with dual deep‐oxide trenches for fast reverse recovery and suppressed oscillation. Electronics letters. 52 (1), pp. 71-73. [Online].
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Zhu, J. et al. (2016). 500 V SOI lateral pin diode with dual deep‐oxide trenches for fast reverse recovery and suppressed oscillation. Electronics letters. 52 (1), pp. 71-73. [Online].