AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz. Issue 20 (1st September 2013)

• Record Type: Journal Article
• Authors: Dumka, D.C.; Chou, T.M.; Faili, F.; Francis, D.; Ejeckam, F.
• Is Part Of: Electronics letters. Volume 49:Issue 20(2013)
• Page Start: 1298
• Page End: 1299
• Publication Date: 2013-09-01
• Subjects: aluminium compounds -- chemical vapour deposition -- diamond -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- silicon -- substrates -- wide band gap semiconductors; diamond substrate -- output power density -- RF performance -- high electron mobility transistors -- peak power‐added‐efficiency -- power gain -- gate‐width HEMT -- drain bias -- device wafers -- nitride transition layers -- dielectric deposition -- chemical vapour deposition -- dielectric adhering -- test HEMT -- gate length process -- frequency 10 GHz -- voltage 40 V -- size 0.25 mum -- AlGaN‐GaN -- Si; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.1973
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Record RF performance of AlGaN/GaN high electron mobility transistors (HEMTs) on a diamond substrate with over 7 W/mm output power density at 10 GHz is reported. It is achieved along with the peak power‐added‐efficiency over 46% and power gain over 11 dB for 2 × 100 µm gate‐width HEMTs at 40 V drain bias. Device wafers are prepared by first removing the host Si (111) substrate and nitride transition layers beneath the channel, depositing a 50 nm dielectric onto the exposed GaN buffer, and finally growing 100 µm of a chemical vapour deposition diamond onto the dielectric adhering to the epitaxial AlGaN/GaN. This approach enables the active GaN channel to be brought within 1 µm of the diamond substrate. Test HEMTs are fabricated using a dielectrically defined 0.25 µm gate length process.