645‐GHz InP heterojunction bipolar transistor harmonic oscillator. Issue 22 (1st October 2017)

• Record Type: Journal Article
• Authors: Yun, J.; Kim, J.; Yoon, D.; Rieh, J.‐S.
• Is Part Of: Electronics letters. Volume 53:Issue 22(2017)
• Page Start: 1475
• Page End: 1477
• Publication Date: 2017-10-01
• Subjects: heterojunction bipolar transistors -- harmonic oscillators -- indium compounds -- wide band gap semiconductors -- III‐V semiconductors -- millimetre wave oscillators; heterojunction bipolar transistor harmonic oscillator -- common‐base cross‐coupled topology -- second harmonic signal -- push‐push operation -- bias variation -- terahertz imaging -- signal source -- frequency 561.5 GHz to 645.1 GHz -- power 49.3 mW -- InP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.2615
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : 645‐GHz signal generation with a harmonic oscillator based on a 250‐nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common‐base cross‐coupled topology, generating a second harmonic signal through the push–push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is –17.4 dBm with a dc power dissipation of 49.3 mW (dc‐to‐RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source.