650 mW/mm output power density of H‐terminated polycrystalline diamond MISFET at 10 GHz. Issue 7 (1st March 2020)

• Record Type: Journal Article
• Authors: Yu, Cui; Zhou, Chuang Jie; Guo, Jian Chao; He, Ze Zhao; Wang, Hong Xing; Cai, Shu Jun; Feng, Zhi Hong
• Is Part Of: Electronics letters. Volume 56:Issue 7(2020)
• Page Start: 334
• Page End: 335
• Publication Date: 2020-03-01
• Subjects: elemental semiconductors -- MISFET -- alumina -- diamond; continuous‐wave output power density -- H‐terminated polycrystalline diamond -- metal–insulator–semiconductor field effect transistors -- hydrogen‐terminated polycrystalline diamond -- aluminium film -- self‐oxidised alumina -- direct current radio frequency performances -- gate dielectric -- frequency 34.0 GHz -- frequency 10.0 GHz -- size 350.0 nm -- size 2.0 nm -- Al2O3 -- C; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.4110
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : In this work, metal–insulator–semiconductor field effect transistors (MISFET) with gate length of 350 nm were fabricated on hydrogen‐terminated polycrystalline diamond by a self‐aligned process. Aluminium film with thickness of 2 nm was evaporated on the sample and formed self‐oxidised alumina to act as the gate dielectric. The devices show good direct current and radio frequency performances with a maximum frequency of oscillation ( f max ) of 34 GHz and continuous‐wave output power density of 650 mW/mm at 10 GHz.