Cite
HARVARD Citation
Du, F. et al. (2020). Vertical bipolar junction transistor triggered silicon‐controlled rectifier for nanoscale ESD engineering. Electronics letters. 56 (7), pp. 350-351. [Online].
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Du, F. et al. (2020). Vertical bipolar junction transistor triggered silicon‐controlled rectifier for nanoscale ESD engineering. Electronics letters. 56 (7), pp. 350-351. [Online].