Performance evaluation of broken gap Esaki tunnel diodes on Si and GaSb substrates. Issue 1 (1st January 2016)

• Record Type: Journal Article
• Authors: Thomas, P.M.; Filmer, M.J.; Gaur, A.; Rommel, S.L.; Bhatnagar, K.; Droopad, R.
• Is Part Of: Electronics letters. Volume 52:Issue 1(2016)
• Page Start: 73
• Page End: 75
• Publication Date: 2016-01-01
• Subjects: silicon -- elemental semiconductors -- gallium compounds -- indium compounds -- III‐V semiconductors -- tunnel diodes -- current density; InAs‐GaSb -- GaSb -- Si -- size 3 nm -- III–V Esaki diodes -- current density -- Si sample devices -- GaSb i‐layers -- n‐InAs‐p‐GaSb Esaki diodes -- GaSb substrates -- Si substrates -- broken gap Esaki tunnel diodes -- performance evaluation; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2290
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : n ‐InAs/ p ‐GaSb Esaki diodes with 3 nm GaSb i ‐layers are fabricated on Si and GaSb substrates. The on Si sample devices exhibit lower peak to valley ratios and peak current density than their on GaSb counterparts at 3.27 against 4.45 and 119 against 336 kA/cm 2, respectively. The findings are similar to other reports of integrating III–V Esaki diodes onto Si.