Observation of second flexural mode enhancement in graphene resonators. Issue 13 (3rd June 2015)

• Record Type: Journal Article
• Authors: Chen, T.; Mastropaolo, E.; Bunting, A.; Cheung, R.
• Is Part Of: Electronics letters. Volume 51:Issue 13(2015)
• Page Start: 1014
• Page End: 1016
• Publication Date: 2015-06-03
• Subjects: graphene devices -- resonators -- monolayers -- electrostatics -- silicon compounds; second flexural mode enhancement -- monolayer graphene resonator -- inhomogeneous electrostatic actuation force -- polysilicon -- second harmonic -- actuation voltage -- amplitude enhancement -- graphene resonant sensors -- Si‐SiO2‐Si -- C; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0361
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The enhancement of the second flexural mode in a monolayer graphene resonator by an inhomogeneous electrostatic actuation force has been observed. The devices have been fabricated by transferring the graphene onto a poly‐Si/SiO2 /Si substrate whereby the poly‐Si has been released to produce graphene resonators. Enhancement of the second harmonic has been demonstrated by varying the actuation voltage, achieving an amplitude enhancement of up to 95% of the fundamental mode. The reported findings open new perspectives for graphene resonant sensors with enhanced sensitivity.