V‐band injection‐locked oscillator with 9 GHz locking range. Issue 8 (1st April 2013)

• Record Type: Journal Article
• Authors: Feng, C.; Yu, X.P.; Lu, Z.H.; Lim, W.M.; Sui, W.Q.
• Is Part Of: Electronics letters. Volume 49:Issue 8(2013)
• Page Start: 548
• Page End: 549
• Publication Date: 2013-04-01
• Subjects: circuit tuning -- CMOS integrated circuits -- injection locked oscillators -- microwave oscillators; V‐band injection‐locked oscillator -- ILO -- self‐biased injection circuit -- series‐inductive peaking technique -- signal injection -- Global Foundries -- CMOS process -- locking range -- tuning mechanism -- size 65 nm -- frequency 9 GHz -- frequency 52 GHz to 71 GHz -- current 13 mA -- voltage 1.2 V; circuit tuning -- CMOS integrated circuits -- injection locked oscillators -- microwave oscillators; V‐band injection‐locked oscillator -- ILO -- self‐biased injection circuit -- series‐inductive peaking technique -- signal injection -- Global Foundries -- CMOS process -- locking range -- tuning mechanism -- size 65 nm -- frequency 9 GHz -- frequency 52 GHz to 71 GHz -- current 13 mA -- voltage 1.2 V; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.0182
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An injection‐locked oscillator (ILO) with a self‐biased injection circuit is proposed. By using the series‐inductive peaking technique, the efficiency of the signal injection is considerably improved. Implemented in Global Foundries 65 nm bulk CMOS process, the proposed ILO demonstrated a 9 GHz locking range and can operate in 52–71 GHz with the tuning mechanism. Occupying a silicon area of 0.3 mm 2, the circuit draws 13 mA from a 1.2 V supply including the output buffers.