High‐performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide. Issue 7 (1st March 2013)

• Record Type: Journal Article
• Authors: Cai, Chun‐Hua; Qin, Ming
• Is Part Of: Electronics letters. Volume 49:Issue 7(2013)
• Page Start: 488
• Page End: 490
• Publication Date: 2013-03-01
• Subjects: Si; temperature; capacitive sensors -- CMOS integrated circuits -- sensitivity -- silicon -- temperature sensors -- graphene; high‐performance bulk silicon interdigital capacitive temperature sensor -- graphene oxide -- GO -- typical CMOS integrated temperature sensors -- bulk silicon interdigital capacitive temperature sensor -- sensing material -- temperature ‐70 degC to 40 degC -- Si; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.4141
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A high‐performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO) is presented. Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of − 70 to 40°C.