Cite
HARVARD Citation
Yuan, L. et al. (2014). 4H‐SiC work‐function‐dependent bipolar transistor with ultra‐high current gain. Electronics letters. 50 (24), pp. 1805-1806. [Online].
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Yuan, L. et al. (2014). 4H‐SiC work‐function‐dependent bipolar transistor with ultra‐high current gain. Electronics letters. 50 (24), pp. 1805-1806. [Online].