High mobility transparent flexible nickel‐doped zinc oxide thin‐film transistors with small subthreshold swing. Issue 20 (1st October 2015)

• Record Type: Journal Article
• Authors: Huang, Lingling; Han, Dedong; Zhang, Yi; Shi, Pan; Yu, Wen; Cui, Guodong; Cong, Yingying; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi
• Is Part Of: Electronics letters. Volume 51:Issue 20(2015)
• Page Start: 1595
• Page End: 1596
• Publication Date: 2015-10-01
• Subjects: high electron mobility transistors -- nickel -- semiconductor doping -- zinc compounds -- thin film transistors -- plastics -- substrates -- sputtering -- flexible displays; high mobility transparent flexible nickel doped zinc oxide thin‐film transistor -- small subthreshold swing -- NZO TFT -- flexible transparent plastic substrate -- electrical property -- SS -- saturation mobility -- sputtering pressure -- channel deposition -- RF magnetron sputtering -- drain current -- positive threshold voltage -- flexible fully transparent display -- pressure 0.4 Pa -- pressure 0.8 Pa -- pressure 1.2 Pa -- pressure 1.6 Pa -- voltage 2.36 V -- ZnO:Ni; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2041
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : High‐mobility nickel (Ni)‐doped zinc oxide thin‐film transistors (NZO TFTs) have been successfully fabricated on flexible transparent plastic substrates at a low temperature. The devices all exhibited good electrical properties with small subthreshold swing (SS) and high saturation mobility fabricated under different sputtering pressure (0.4, 0.8, 1.2, 1.6 Pa) during channel deposition by RF magnetron sputtering were found. The electrical properties of NZO TFTs reached the best when the sputtering pressure was 1.6 Pa, with an SS of 89 mV/decade, a saturation mobility of 172 cm 2 ·V −1 ·s −1, a drain current on/off ratio of 10 8, and a positive threshold voltage of 2.36 V. The results show that Ni‐doped ZnO is a promising candidate for flexible fully transparent displays.