On‐chip data strobe transmission with short‐circuit current protection scheme for dynamic random access memory. Issue 1 (1st January 2018)

• Record Type: Journal Article
• Authors: Lee, Won‐Young; Jung, Chae‐Young
• Is Part Of: Electronics letters. Volume 54:Issue 1(2018)
• Page Start: 21
• Page End: 23
• Publication Date: 2018-01-01
• Subjects: DRAM chips -- CMOS memory circuits -- short‐circuit currents -- flip‐flops; short‐circuit current protection scheme -- DRAM -- on‐chip data strobe transmission circuit -- on‐chip differential repeaters -- cross‐coupled latches -- sampling margin reduction -- node monitoring circuit -- high‐impedance inputs -- differential signalling -- single‐write operation -- CMOS technology -- active chip area -- size 350 nm -- current 6.2 mA; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.3634
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : This Letter proposes an on‐chip data strobe transmission circuit for dynamic random access memory (DRAM). The on‐chip differential repeaters with cross‐coupled latches are adopted to prevent the sampling margin reduction. A node monitoring circuit has been proposed to prevent short‐circuit currents of the on‐chip differential repeaters and cross‐coupled latches caused by high impedance inputs. When compared with the conventional differential signalling, the proposed circuit can save the short‐circuit current of 6.2 mA per a single write operation. The chip has been fabricated in 350 nm CMOS technology and the active chip area is 0.189 mm 2 .