GaAs Fabry‐Pérot cavity photoconductors: switching with picojoule optical pulses. Issue 3 (1st January 2013)

• Record Type: Journal Article
• Authors: Peytavit, E.; Formont, S.; Lampin, J.‐F.
• Is Part Of: Electronics letters. Volume 49:Issue 3(2013)
• Page Start: 207
• Page End: 208
• Publication Date: 2013-01-01
• Subjects: GaAs; energy; Fabry‐Perot resonators -- gallium arsenide -- III‐V semiconductors -- laser cavity resonators -- laser mode locking -- microwave photonics -- optical switches -- photoconducting materials -- photoconducting switches; picojoule optical pulses -- low‐temperature‐grown Fabry‐Perot cavity photoconductors -- optical switches -- switching efficiency -- pulse energy -- optical sampling -- microwave signals -- low power pulsed laser -- energy 14.2 pJ -- GaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.3993
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : It is shown that low‐temperature‐grown GaAs photoconductors using a Fabry‐Pérot cavity are very efficient optical switches in comparison with planar photoconductors. A switching efficiency of about 60% was measured with a pulse energy as low as 1.2 pJ and about 100% efficiency is achieved with a pulse energy of 14.2 pJ. Efficient optical sampling of microwave signals is now achievable with a low power pulsed laser.