10 GHz CMOS hybrid reflective‐type phase shifter with enhanced phase shifting range. Issue 23 (1st November 2015)

• Record Type: Journal Article
• Authors: Li, Jinbo; Shu, Ran; Gu, Qun J.
• Is Part Of: Electronics letters. Volume 51:Issue 23(2015)
• Page Start: 1935
• Page End: 1937
• Publication Date: 2015-11-01
• Subjects: microwave phase shifters -- CMOS integrated circuits -- field effect MMIC -- inductors; CMOS hybrid reflective‐type phase shifter -- enhanced phase shifting range -- parasitic capacitance -- simple position interchange -- electronic components -- grounding inductors -- resonant networks -- frequency 9 GHz to 10.75 GHz -- size 65 nm; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2515
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A new idea is presented to boost the phase shifting range of a reflective‐type phase shifter (RTPS) by leveraging the parasitic capacitance; however, without any cost or design overhead. In contrast to the conventional RTPS, where the parasitic capacitance degrades the phase shifting range, a simple position interchange of electronic components leads to an enlarged tuning range. This mechanism is analysed thoroughly and validated by simulation and measurement results. Two RTPSs with different component positions are fabricated in a 65 nm CMOS technology. Grounding inductors leads to a more than 30° phase shifting range than the conventional ones without this arrangement. The S 11 is measured at <−10 dB from 9 to 10.75 GHz and the S 21 is −6 dB with <0.6 dB variations at 10.2 GHz. This technique also provides design insights for phase shifting and tuning range enhancement of general resonant networks.