Butterfly packaged high‐speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems. Issue 4 (1st February 2013)

• Record Type: Journal Article
• Authors: Yang, H.; Ye, N.; Phelan, R.; O'Carroll, J.; Kelly, B.; Han, W.; Wang, X.; Nudds, N.; MacSuibhne, N.; Gunning, F.; O'Brien, P.; Peters, F.H.; Corbett, B.
• Is Part Of: Electronics letters. Volume 49:Issue 4(2013)
• Page Start: 281
• Page End: 282
• Publication Date: 2013-02-01
• Subjects: InGaAs; current -- voltage -- wavelength -- wavelength; gallium arsenide -- III‐V semiconductors -- indium compounds -- leakage currents -- optical fabrication -- photodetectors -- photodiodes -- semiconductor device packaging -- semiconductor quantum wells; butterfly packaged low leakage quantum well photodiode -- wavelength systems -- edge‐coupled high‐speed photodiode -- strained quantum wells -- leakage current -- bias voltage -- responsivity -- high speed performance -- wavelength 2000 nm -- current 120 nA -- voltage ‐3 V -- wavelength 1550 nm -- InGaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.4335
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An edge‐coupled high‐speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at −3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high‐speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar high‐speed performance at 1550nm.