Lattice parameter engineering for III–V long wave infrared photonics. Issue 19 (4th September 2015)

• Record Type: Journal Article
• Authors: Belenky, G.; Lin, Y.; Shterengas, L.; Donetsky, D.; Kipshidze, G.; Suchalkin, S.
• Is Part Of: Electronics letters. Volume 51:Issue 19(2015)
• Page Start: 1521
• Page End: 1522
• Publication Date: 2015-09-04
• Subjects: indium compounds -- arsenic compounds -- III‐V semiconductors -- optical materials -- periodic structures -- lattice constants -- optical design techniques -- energy gap -- photoluminescence -- optical fabrication; lattice parameter engineering -- III‐V long wave infrared photonics -- metamorphic periodic heterostructures -- controllable modulated composition -- well‐regulated band alignments -- bandgap energy -- strain compensation -- lattice constant -- photoluminescence -- wavelength 12.9 mum to 19.6 mum -- InAsSb‐InAsSb -- GaIn2Sb; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.2572
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well‐regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSb x /InAsSb y pairs grown on a virtual GaIn z Sb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 µm. It is concluded that the growth of strain compensated InAsSb x /InAsSb y on virtual substrates allows developing narrow bandgap III–V materials with various bandgap energies.