On the impact of current generation commercial gallium nitride power transistors on power converter loss. Issue 22 (1st October 2017)

• Record Type: Journal Article
• Authors: Petersen, A.; Stone, D.A.; Foster, M.P.
• Is Part Of: Electronics letters. Volume 53:Issue 22(2017)
• Page Start: 1487
• Page End: 1489
• Publication Date: 2017-10-01
• Subjects: power convertors -- gallium compounds -- wide band gap semiconductors -- III‐V semiconductors -- power transistors -- switches; current generation commercial power transistors -- power converter loss -- power switching device loss -- multilevel converters -- GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.3183
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The enormous potential benefits of gallium nitride based power switching devices, only commercially available very recently, in terms of power switching device loss are highlighted. This is first demonstrated through a simulated prediction of loss in multilevel converters, followed by experimental validation. While the simulations focus on losses in multilevel converters, the observations made are relevant in a broad range of applications.