21.3 dBm 18.5 GHz‐BW 8‐way E‐band power amplifier in 28 nm high performance mobile CMOS. Issue 19 (1st September 2017)

• Record Type: Journal Article
• Authors: Zhao, Dixian; Reynaert, Patrick
• Is Part Of: Electronics letters. Volume 53:Issue 19(2017)
• Page Start: 1310
• Page End: 1312
• Publication Date: 2017-09-01
• Subjects: field effect MMIC -- MMIC power amplifiers -- CMOS analogue integrated circuits -- wideband amplifiers -- power combiners -- MOSFET circuits -- distortion; 8‐way E‐band power amplifier -- HPM CMOS process -- fully integrated broadband E‐band power amplifier -- neutralised bootstrapped cascode amplifier topology -- 8‐way differential series‐parallel power combiner -- PMOS transistors -- NMOS transistors -- AM‐PM distortion -- nonlinear gate‐to‐source capacitance -- input voltage amplitude -- frequency 18.5 GHz -- size 28 nm; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.3839
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A fully integrated broadband E‐band power amplifier (PA) is implemented in 28 nm CMOS process. To enhance the output power ( P OUT ), an 8‐way differential series‐parallel power combiner is used together with the neutralised bootstrapped cascode amplifier topology. The unit PAs are realised by both NMOS and PMOS transistors, respectively, which cancel the amplitude‐to‐phase modulation (AM‐PM) distortion due to non‐linear gate‐to‐source capacitance ( C GS ) of NMOS and PMOS transistors under large input voltage amplitude. The presented PA achieves a saturated output power ( P SAT ) of 21.3 dBm with more than 18.5 GHz −3 dB small‐signal bandwidth (BW−3 dB ).