Highly sensitive seesaw capacitive pressure sensor based on SOI wafer. Issue 5 (1st February 2014)

• Record Type: Journal Article
• Authors: Yang, C.C.; Zhao, Q.; Gao, C.C.; Liu, G.D.; Zhang, Y.X.; Cui, W.P.; Hao, Y.L.
• Is Part Of: Electronics letters. Volume 50:Issue 5(2014)
• Page Start: 376
• Page End: 377
• Publication Date: 2014-02-01
• Subjects: silicon -- elemental semiconductors -- silicon‐on‐insulator -- capacitive sensors -- pressure sensors -- microsensors -- deformation -- diaphragms; highly sensitive seesaw capacitive pressure sensor -- microelectromechanical system -- MEMS -- mechanical deformation -- diaphragm -- silicon on insulator wafer -- Si; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.4170
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor's sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa.