Effect of electric field on exciton in high‐purity GaAs epilayer measured at room temperature. Issue 1 (1st January 2013)

• Record Type: Journal Article
• Authors: Kayastha, M.S.; Sapkota, D.P.; Takahashi, M.; Wakita, K.
• Is Part Of: Electronics letters. Volume 49:Issue 1(2013)
• Page Start: 57
• Page End: 58
• Publication Date: 2013-01-01
• Subjects: GaAs; noise figure -- size -- temperature -- voltage; biexcitons -- electroabsorption -- gallium arsenide -- III‐V semiconductors -- red shift -- Schottky effect -- semiconductor epitaxial layers -- surface structure -- transparency; electric field effects -- excitonic electroabsorption -- high‐purity gallium arsenide epilayer -- red shift -- surface normal structure -- polyaniline -- transparent Schottky electrode -- temperature 293 K to 298 K -- size 10 mum -- noise figure 10 dB -- voltage 11 V -- GaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.3728
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The excitonic electroabsorption has been investigated for a high‐purity GaAs epilayer of 10 µm thickness at room temperature and clear red‐shift (≃1.44 nm) of the excitonic absorption peak has been observed. An extinction ratio over 10 dB has been obtained with an applied voltage of 11 V, which is nearly five times larger than the theoretical estimation without considering the exciton. This may be the first observation for of a surface normal structure with a polyaniline as a transparent Schottky electrode. The insertion loss is estimated to be 3 dB. This relative low driving voltage for a bulk configuration without quantum wells is due to high‐purity GaAs.